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Study of cooling of hot carriers and intervalley scattering in In sub 0. 53 Ga sub 0. 47 As by subpicosecond Raman scattering

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.103133· OSTI ID:7186520
;  [1]
  1. Department of Physics, University of California, Berkeley, California (USA) Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (USA)
Subpicosecond laser pulses have been used to excite and probe photoexcited hot-electron plasma in In{sub 0.53} Ga{sub 0.47} As by Raman scattering. Hot-electron temperatures have been measured as a function of the length of subpicosecond pulses. Cooling of the hot electrons is compared with a model calculation in which the cooling mechanism is dominated by intervalley scattering. The {Gamma} to {ital L} intervalley deformation potential in In{sub 0.53} Ga{sub 0.47} As was determined to be around 3.5{times}10{sup 8} eV/cm.
DOE Contract Number:
AC03-76SF00098
OSTI ID:
7186520
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:16; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English