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The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

Journal Article · · IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (USA)
DOI:https://doi.org/10.1109/55.46942· OSTI ID:6816990
; ; ;  [1]; ; ;  [2]
  1. Pennsylvania State Univ., University Park, PA (USA). Dept. of Electrical Engineering
  2. Pennsylvania State Univ., University Park, PA (USA). Materials Research Lab.
Both doped and undoped homoepitaxial diamond films were fabricated using microwave plasma-enhanced chemical vapor deposition (CVD). The conductivity of the diamond film is strongly affected by the surface treatment. In particular, exposure of film surface to a hydrogen plasma results in the formation of a conductive layer which can be used to obtain linear (ohmic) {ital I-V} characteristics of the Au/diamond contacts, regardless of the doping level. The proper chemical cleaning of the boron-doped homoepitaxial diamond surface allows the fabrication of Au-gate Schottky diodes with excellent rectifying characteristics at temperatures of at least 400{degrees}C.
OSTI ID:
6816990
Journal Information:
IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 11:2; ISSN EDLED; ISSN 0741-3106
Country of Publication:
United States
Language:
English