Determination of barrier height of boron doped polycrystalline diamond thin film Schottky diodes using a capacitance-voltage technique
Conference
·
OSTI ID:230032
- Univ. of Missouri, Columbia, MO (United States); and others
Distinctive frequency dependent capacitance-voltage (C-V) characteristics of boron-doped chemical vapor deposited (CVD) diamond thin film Schottky diodes were observed. The results exhibited not only small signal differential capacitance dependence on both the reverse bias voltage and test frequency, but also linear inverse squared capacitance-voltage characteristics at all test frequencies, ranging from 1 kHz to 1 MKz. The Schottky barrier heights of both Al- and Au-hot filament CVD diamond Schottky diodes were determined to be 1.04 and 1.09 eV, respectively. An effective carrier concentration in the range of 0.5 to 1.5 x 10{sup 17}cm {sup {minus}3} was estimated. The distinct C-V characteristics obtained in this study are attributed to careful surface cleaning and the use of moderate boron doped diamond thin films.
- OSTI ID:
- 230032
- Report Number(s):
- CONF-950840--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Silver on diamond Schottky diodes formed on boron doped hot-filament chemical vapor deposited polycrystalline diamond films
Effect of mechanical stress on current-voltage characteristics of thin film polycrystalline diamond Schottky diodes
The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film
Journal Article
·
Mon Aug 31 00:00:00 EDT 1992
· Applied Physics Letters; (United States)
·
OSTI ID:7087562
Effect of mechanical stress on current-voltage characteristics of thin film polycrystalline diamond Schottky diodes
Journal Article
·
Sun Feb 14 23:00:00 EST 1993
· Journal of Applied Physics; (United States)
·
OSTI ID:6905248
The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film
Journal Article
·
Wed Jan 31 23:00:00 EST 1990
· IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (USA)
·
OSTI ID:6816990