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A monolithically integrated detector-preamplifier on high-resistivity silicon

Conference ·
OSTI ID:6812468

A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/{radical}Hz in the white noise regime. Measurements with an Am{sup 241} radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm{sup 2} detector with on-chip amplifier in an experimental setup with substantial external pickup.

Research Organization:
Lawrence Berkeley Lab., CA (USA)
Sponsoring Organization:
DOE/ER
DOE Contract Number:
AC03-76SF00098
OSTI ID:
6812468
Report Number(s):
LBL-28667; CONF-900143--35; ON: DE90013844
Country of Publication:
United States
Language:
English

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