A monolithically integrated detector-preamplifier on high-resistivity silicon
- Lawrence Berkeley Lab., CA (USA)
A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/square root of Hz in the white noise regime. Measurements with an Am{sup 241} radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm{sup 2} detector with on-chip amplifier in an experimental setup with substantial external pickup.
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6607177
- Report Number(s):
- CONF-900143--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:2; ISSN 0018-9499; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACTINIDE ISOTOPES
ACTINIDE NUCLEI
ALPHA DECAY RADIOISOTOPES
AMERICIUM 241
AMERICIUM ISOTOPES
AMPLIFIERS
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
FABRICATION
HEAVY NUCLEI
INTEGRATED CIRCUITS
ISOTOPES
JUNCTIONS
MEASURING INSTRUMENTS
MICROELECTRONIC CIRCUITS
NUCLEI
ODD-EVEN NUCLEI
P-N JUNCTIONS
PERFORMANCE
PHOTODIODES
PREAMPLIFIERS
RADIATION DETECTORS
RADIOISOTOPES
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SI SEMICONDUCTOR DETECTORS
YEARS LIVING RADIOISOTOPES