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A monolithically integrated detector-preamplifier on high-resistivity silicon

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
OSTI ID:6607177
;  [1]
  1. Lawrence Berkeley Lab., CA (USA)

A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/square root of Hz in the white noise regime. Measurements with an Am{sup 241} radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm{sup 2} detector with on-chip amplifier in an experimental setup with substantial external pickup.

DOE Contract Number:
AC03-76SF00098
OSTI ID:
6607177
Report Number(s):
CONF-900143--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:2; ISSN 0018-9499; ISSN IETNA
Country of Publication:
United States
Language:
English