Surface-bonding geometry of (2 x 1)S/Ge(001) by the normal-emission angle-resolved photoemission extended-fine-structure technique
The surface structure of (2 x 1)S/Ge(001) was determined using the angle-resolved photoemission extended-fine-structure technique in the normal-emission direction. By comparison of the experimental data with curved-wave, multiple-scattering calculations, quantitative information about the local adsorption geometry was obtained. In particular, adsorption in a twofold bridge site, with a S-Ge bond length of 2.36 +- 0.05 A, was found. The twofold S bridge appears most likely to occur between two partially intact symmetric Ge-Ge dimers, with the Ge dimer laterally displaced by 0.10 +- 0.05 A from the bulk position. This result therefore provides evidence for S bonding to strong dangling bonds in the original dimers of the clean Ge(001) surface. There is, however, no evidence of significant surface contraction or expansion in the substrate layers, in contrast to the (2 x 2)S/Ge(111) case.
- Research Organization:
- Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
- OSTI ID:
- 6810050
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 38:12; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
ADSORPTION
BOND ANGLE
BOND LENGTHS
CHEMICAL BONDS
CRYSTAL FACES
CRYSTAL STRUCTURE
DEPOSITION
DIMENSIONS
ELEMENTS
EMISSION
GERMANIUM
LENGTH
METALS
MICROSTRUCTURE
NONMETALS
PHOTOEMISSION
SECONDARY EMISSION
SORPTION
SULFUR
SURFACE COATING
SURFACE PROPERTIES