Correlation between solid-state reaction and electrical properties of the Rh/GaAs Schottky contact

Journal Article · Sun Feb 01 04:00:00 EST 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.338205· OSTI ID:6809798

Yu, K M; Cheung, S K; Sands, T; Jaklevic, J M; Haller, E E

The solid-state reactions between (100) GaAs substrates and Rh films --150 A and --600 A thick, annealed at temperatures between 300 and 800 /sup 0/C, are investigated with conventional and heavy ion Rutherford backscattering spectrometry, and x-ray diffraction. Initiation of interface reactions between the Rh films and the GaAs substrate is observed at --300 /sup 0/C. Laterally segregated RhGa, RhAs, and RhAs/sub 2/ phases are detected for the 150-A Rh/GaAs contact annealed in the temperature range of 300--700 /sup 0/C. For thick Rh film (--600 A) on GaAs, vertical phase separation between the RhGa and the Rh-As phases is observed after annealing. After annealing at 700 /sup 0/C for 20 min, the reaction between the 600-A Rh film and GaAs is complete and a layer sequence of RhGa/RhAs/sub 2//GaAs results. Electrical properties of Rh/n-GaAs diodes are measured using the current voltage dependence. A correlation between the electrical behavior and the metallurgical reaction is observed.

• Research Organization: Center for Advanced Materials, Lawrence Berkeley Laboratory and University of California, Berkeley, California 94720
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6809798
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 61:3; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
ELECTRICAL PROPERTIES
ELEMENTS
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HIGH TEMPERATURE
INTERFACES
METALS
PHYSICAL PROPERTIES
PLATINUM METALS
PNICTIDES
RHODIUM
SCHOTTKY BARRIER DIODES
SEGREGATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
THIN FILMS
TRANSITION ELEMENTS