Fundamental Studies of Defect Generation in Amorphous Silicon Alloys Grown by Remote Plasma-Enhanced Chemical Vapor Deposition (Remote PECVD), Annual Subcontract Report, 1 September 1990 - 31 August 1991

Technical Report · Fri Jan 01 00:00:00 EST 1993

DOI:https://doi.org/10.2172/6796766· OSTI ID:6796766

Lucovsky, G.; Nemanich, R. J.; Bernholc, J.; Whitten, J.; Wang, C.; Davidson, B.; Williams, M.; Lee, D.; Bjorkman, C.; Jing, Z.

We demonstrated that the remote PECVD process can be used to deposit heavily doped n-type and p-type a-Si:H thin films. We optimized conditions for depositing undoped, near-intrinsic and heavily doped thin films of [mu]c(microcrystalline)-Si by remote PECVD. We extended the remote PECVD process to the deposition of undoped and doped a-Si,C:H and [mu]c-Si,C alloy films. We analyzed transport data for the dark conductivity in undoped and doped a-Si:H, a-Si,C:H, [mu]c-Si and [mu]c-Si,C films. We studied the properties of doped a-Si:H and [mu]c-Si in MOS capacitors using [approximately]10 [Omega]-cm p-type crystalline substrates and thermally grown Si0[sub 2] dielectric layers. We collaborated with a group at RWTH in Aachen, Germany, and studied the contributions of process induced defect states to the recombination of photogenerated electron pairs. We applied a tight-binding model to Si-Bethe lattice structures to investigate the effects of bond angle, and dihedral angle disorder. We used ab initio and empirical calculations to study non-random bonding arrangements in a-Si,O:H and doped a-Si:H films.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 6796766
• Report Number(s): NREL/TP-451-4852; ON: DE92010560
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
360601* -- Other Materials-- Preparation & Manufacture
alloys
amorphous silicon
AMORPHOUS STATE
BORON ADDITIONS
BORON ALLOYS
CAPACITORS
CARBON ADDITIONS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
DIRECT ENERGY CONVERTERS
DOCUMENT TYPES
DOPED MATERIALS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
FILMS
high efficiency
HYDROGEN ADDITIONS
MATERIALS
modules
MOLECULAR STRUCTURE
MOS SOLAR CELLS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
photovoltaics
PHYSICAL PROPERTIES
PLASMA
PROGRESS REPORT
PVCVD desposition
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
solar cells
SOLAR EQUIPMENT
SURFACE COATING
THIN FILMS