Theoretical studies and modeling of III-V nitride materials and devices for optoelectronic applications. Final report, 1 September 1996--30 June 1997
Two main objectives of this research program include: (1) investigation of the fundamental material, transport, and optical properties of III-V nitrides; and (2) simulation and design optimization of GaN-based optoelectronic devices. Study of fundamental physical properties (such as carrier scattering and optical transitions) is based on an envelope function formalism for accurate description of band spectrum in bulk and confined structures. Numerical analyses and optimization of GaN-based devices are approached by solving a set of coupled equations self-consistently. This research initiative has provided valuable insight for the development and optimization of III-V nitride optoelectronic devices, particularly, blue/UV quantum well lasers.
- Research Organization:
- North Carolina State Univ., Dept. of Electrical and Computer Engineering, Raleigh, NC (United States)
- OSTI ID:
- 679019
- Report Number(s):
- AD-A-365192/XAB; NCSU-FAS-5-30684; CNN: Contract DAAH04-96-1-0431; TRN: 92430416
- Resource Relation:
- Other Information: PBD: Mar 1999
- Country of Publication:
- United States
- Language:
- English
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