III-V nitride materials and processes

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:417628

Moustakas, T D ^[1]; Dismukes, J P ^[2]; Pearton, S J ^[3]

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1. ed.; Boston Univ., MA (United States)
2. ed.; Univ. of Toledo, OH (United States)
3. ed.; Univ. of Florida, Gainesville, FL (United States)

The First Symposium on III-V Nitride Materials and Processes was held in Los Angeles, California, May 6--8, 1996, and focused on recent experimental and theoretical developments and applications in the rapidly growing area of refractory III-V nitrides. The symposium was jointly sponsored by the Dielectric Science and Technology, Electronics and Luminescence and Display Materials Divisions of the Electrochemical Society. Subject areas included crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, optoelectronic properties and device structures. Particular attention was placed on the role of heteroepitaxy in the stabilization of the various allotropic phases (wurtzite, zincblende, sodium chloride) and the formation of native defects. Hydrogen passivation of Mg acceptors in GaN, as well as compensation, was addressed. The application of GaN, InN, AlN, ScN, etc. to optical devices (visible and UV emitters, full color displays, detectors) as well as high temperature electronics was covered in a number of presentations. Twenty two papers were processed separately for inclusion on the data base.

• OSTI ID: 417628
• Report Number(s): CONF-960502--; ISBN 1-56677-163-3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM NITRIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
ELECTRIC CONTACTS
ETCHING
EXPERIMENTAL DATA
GALLIUM NITRIDES
INDIUM NITRIDES
ION IMPLANTATION
LEADING ABSTRACT
MEETINGS
MICROSTRUCTURE
NITRIDES
PHYSICAL PROPERTIES
SCANDIUM NITRIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILICON