Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

Technical Report · Tue Apr 01 04:00:00 EST 1997

DOI:https://doi.org/10.2172/603468· OSTI ID:603468

Lawniczak-Jablonska, K. ^[1]; Liliental-Weber, Z.; Gullikson, E. M. ^[2]

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1. Lawrence Berkeley National Lab., CA (United States)
2. Lawrence Berkeley National Lab., CA (United States); and others

Group III nitrides (AlN, GaN, and InN) consist of the semiconductors which appear recently as a basic materials for optoelectronic devices active in the visible/ultraviolet spectrum as well as high-temperature and high-power microelectronic devices. However, understanding of the basic physical properties leading to application is still not satisfactory. One of the reasons consists in unsufficient knowledge of the band structure of the considered semiconductors. Several theoretical studies of III-nitrides band structure have been published but relatively few experimental studies have been carried out, particularly with respect to their conduction band structure. This motivated the authors to examine the conduction band structure projected onto p-states of the nitrogen atoms for AlN, GaN and InN. An additional advantage of their studies is the availability of the studied nitrides in two structures, hexagonal (wurtzite) and cubic (zincblende). This offers an opportunity to gain information about the role of the anisotropy of electronic band states in determining various physical properties.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 603468
• Report Number(s): LBNL--39981; ON: DE97007345
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
ANISOTROPY
BAND THEORY
CRYSTAL STRUCTURE
ENERGY GAP
GALLIUM NITRIDES
INDIUM NITRIDES