Growth and properties of III-V nitride films, quantum well structures and integrated heterostructure devices

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:394940

Schetzina, J F ^[1]

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1. North Carolina State Univ., Raleigh, NC (United States). Dept. of Physics

Growth of III-V nitrides by molecular beam epitaxy (MBE) is being studied at NCSU using an rf nitrogen plasma source. GaN/SiC substrates consisting of {approximately}3 {micro}m thick GaN buffer layers growth on 6H-SiC wafers by MOVPE at Cree Research, Inc. are being used as substrates in the MBE film growth experiments. The MBE-grown GaN films exhibit excellent structural and optical properties--comparable to the best GAN films grown by MOVPE--as determined from photoluminescence, x-ray diffraction, and vertical-cross-section TEM micrographs. Mg and Si have been used as dopants for p-type and n-type layers, respectively. Al{sub x}Ga{sub 1{minus}x}N films (x {approximately} 0.06--0.08) and Al{sub x}Ga{sub 1{minus}x}N/GaN multi-quantum-well structures have been grown which display good optical properties. Light-emitting diodes (LEDs) based on double-heterostructures of Al{sub x}Ga{sub 1{minus}x}N/GaN which emit violet light at {approximately} 400 nm have also been demonstrated. Key issues that must be addressed before III-V nitride laser diodes can be demonstrated and commercialized are discussed. New integrated heterostructures are proposed for the development of a variety of vertical-transport devices such as light-emitting diodes, laser diodes, photocathodes, electron emitters based on the negative-electron-affinity of AlN, and certain transistor structures.

• OSTI ID: 394940
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM NITRIDES
COMPOSITE MATERIALS
DOPED MATERIALS
ELECTRON DIFFRACTION
ENERGY BEAM DEPOSITION
EXPERIMENTAL DATA
GALLIUM NITRIDES
INTERFACES
LIGHT EMITTING DIODES
MAGNESIUM
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PLASMA
SCANNING ELECTRON MICROSCOPY
SILICON
SILICON CARBIDES
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION