Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Reactive sticking coefficients of silane on silicon

Conference · · AIP Conf. Proc.; (United States)
OSTI ID:6780931
Reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions. The data were obtained from deposition rate measurements using molecular beam scattering and a very low pressure cold wall reactor. The RSCs have non-Arrhenius temperature dependences and decreases with increasing flux at low (710/sup 0/) temperatures. A simple model involving dissociative adsorption of silane is consistent with these results. The results are compared with previous studies of the SiH/sub 4//Si(s) reaction.
Research Organization:
Sandia National Laboratories, Albuquerque, NM 87185-5800
OSTI ID:
6780931
Report Number(s):
CONF-8711124-
Conference Information:
Journal Name: AIP Conf. Proc.; (United States) Journal Volume: 167:1
Country of Publication:
United States
Language:
English