Radiation ordering of the structure of imperfect semiconductor crystals

Journal Article · Fri Oct 31 23:00:00 EST 1980 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6776687

Chernov, I P; Mamontov, A P; Korotchenko, V A; Timoshnikov, Y A; Boyarko, E Y; Kryuchkov, Y Y; Kopylov, V V

Silicon and gallium arsenide crystals were bombarded with 1.25 MeV ..gamma.. rays and 1.8 MeV electrons. Low doses of either radiation ordered the crystal structure disturbed by previous bombardment with low-energy heavy boron, oxygen, or indium ions. The changes in the crystal structure were deduced from changes in the energy spectra of backscattered helium ions. The results indicated that both g rays and electrons healed defects created by the heavy ions. The mechanism of this effect was not clear but it certainly differed from the thermal and radiation annealing reported earlier in the literature. (AIP)

• Research Organization: Scientific-Research Institute of Nuclear Physics at the S. M. Kirov Polytechnic Institute, Tomsk
• OSTI ID: 6776687
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 14:11; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELECTRON COLLISIONS
ELEMENTS
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAMMA RADIATION
IONIZING RADIATIONS
MEV RANGE
MEV RANGE 01-10
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
SEMIMETALS
SILICON