Prompt charge collection in gallium arsenide diodes struck by energetic heavy ions. Final report, May 1983-December 1985
Charge collection was measured as a function of reverse-bias voltage on GaAs Schottky barrier diodes bombarded with heavy, energetic ions. Ion species included in the study were copper (57 MeV), chlorine (62 MeV), oxygen (18 MeV), and, to establish a baseline for comparisons, /sup 241/Am decay alpha particles (5.4 MeV). Measurements of the drift component of collected charge are compared to funneling predictions based on the Hu and McLean Oldham models. Results show that significant funneling occurs in these gallium arsenide diodes, in reasonable agreement with predictions for the lighter ions, but to a lesser extent than predicted by both models for the heavier ions. Comparing these results with data on silicon diodes published in the literature shows that gallium arsenide is less responsive to heavy ion strikes than silicon. This enhances the value of the gallium arsenide technology for systems required to operate in environments containing high energy heavy ions, such as cosmic rays in the exoatmosphere.
- Research Organization:
- Harry Diamond Labs., Adelphi, MD (USA)
- OSTI ID:
- 7171010
- Report Number(s):
- AD-A-173515/8/XAB; HDL-TR-2087
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360106* -- Metals & Alloys-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALPHA PARTICLES
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGE COLLECTION
CHARGED PARTICLES
CHLORINE IONS
COPPER IONS
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION BEAMS
IONS
MEV RANGE
MEV RANGE 10-100
OXYGEN IONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES