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Charge collection in n-type GaAs Schottky-barrier diodes struck by heavy energetic ions

Journal Article · · IEEE Trans. Nucl. Sci.; (United States)

Charge collection was measured as a function of reverse-bias voltage on GaAs Schottky-barrier diodes bombarded with heavy, energetic ions. Ion species included in the study were copper (57 MeV), chlorine (62 MeV), oxygen (18 MeV), and, to establish a baseline for comparisons, /sup 241/Am-decay alpha particles (5.4 MeV). Measurements of the drift component of collected charge are compared to funneling predictions based on the McLean-Oldham model. Results show that significant funneling occurs, in reasonable agreement with predictions for the lighter ions, but to a lesser extent than predicted for the heavier ions. Measurements at the higher biases show evidence of charge multiplication.

Research Organization:
US Army ERADCOM, Harry Diamond Laboratories, Adelphi, MD 20783
OSTI ID:
5865255
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Issue: 6 Vol. NS-31:6; ISSN IETNA
Country of Publication:
United States
Language:
English