Substitutional effects on the electronic transport of the Kondo semiconductor Ce[sub 3]Bi[sub 4]Pt[sub 3]
- Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
The resistivity [rho] and thermoelectric power [ital S] of the doped Kondo semiconductor (Ce[sub 1[minus][ital x]]La[sub [ital x]])[sub 3]Bi[sub 4]Pt[sub 3] are examined to determine the effects of doping on the narrow gap exhibited by this compound. The transport data provide evidence that the energy gap progressively disappears with increasing concentration of La. The [ital T]=0 transport-energy gap, as determined from either [rho] or [ital S], scales with the single-impurity Kondo energy scale [ital T][sub [ital K]], as estimated from magnetic-susceptibility measurements, independently of [ital x] for [ital x][le]0.25. This result suggests that the gap arises from band hybridization that is driven by Kondo-like correlations rather than from single-electronic interactions.
- OSTI ID:
- 6770495
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:24; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360104* -- Metals & Alloys-- Physical Properties
ALLOYS
BAND THEORY
BISMUTH ALLOYS
BISMUTH BASE ALLOYS
CERIUM ALLOYS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRICITY
ENERGY GAP
KONDO EFFECT
LANTHANUM ADDITIONS
LANTHANUM ALLOYS
PHYSICAL PROPERTIES
PLATINUM ALLOYS
PLATINUM METAL ALLOYS
RARE EARTH ADDITIONS
RARE EARTH ALLOYS
SUBSTOICHIOMETRY
THERMOELECTRICITY