Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Substitutional effects on the electronic transport of the Kondo insulator Ce{sub 3}Bi{sub 4}Pt{sub 3}

Conference ·
OSTI ID:10139094

The resistivity {rho} and thermoelectric power S of the doped Kondo insulator (Ce{sub 1-x}La{sub x}){sub 3}Bi{sub 4}Pt{sub 3} are examined to determine the effects of doping on the narrow gap exhibited by this compound. With increasing La concentration the energy gap progressively disappears in both {rho} and S and band-like transport develops below 25 K. The T-0 transport energy gap as determined from either {rho} or S scales with the single-impurity Kondo energy scale T{sub K} as determined from magnetic susceptibility measurements, independently of x for x {le} 0.25. This result strongly suggests that the gap arises from band hybridization that is driven by Kondo-like many-body correlations rather than from single-electronic interactions.

Research Organization:
Los Alamos National Lab., NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
W-7405-ENG-36
OSTI ID:
10139094
Report Number(s):
LA-UR--94-1073; CONF-940874--2; ON: DE94009331
Country of Publication:
United States
Language:
English

Similar Records

Substitutional effects on the electronic transport of the Kondo semiconductor Ce[sub 3]Bi[sub 4]Pt[sub 3]
Journal Article · Wed Dec 14 23:00:00 EST 1994 · Physical Review, B: Condensed Matter; (United States) · OSTI ID:6770495

Spin-hole doping in the Kondo insulator Ce{sub 3}Bi{sub 4}Pt{sub 3} studied by neutron scattering
Conference · Wed Sep 01 00:00:00 EDT 1993 · OSTI ID:10184651

Resistivity and thermopower studies in the Kondo-lattice Ce sub 3 Sn sub 1 minus x In sub x system
Journal Article · Tue Nov 14 23:00:00 EST 1989 · Physical Review (Section) B: Condensed Matter; (USA) · OSTI ID:5215815