``Electric growth`` of metal overlayers on semiconductor substrates
- Oak Ridge National Lab., TN (United States). Solid State Div.
- Univ. of Texas, Austin, TX (United States). Dept. of Physics
- Princeton Univ., NJ (United States)
In this article, the authors present the main results from their recent studies of metal overlayer growth on semiconductor substrates. They show that a variety of novel phenomena can exist in such systems, resulting from several competing interactions. The confined motion of the conduction electrons within the metal overlayer can mediate a surprisingly long-range repulsive force between the metal-semiconductor interface and the growth front, acting to stabilize the overlayer. Electron transfer from the overlayer to the substrate leads to an attractive force between the two interfaces, acting to destabilize the overlayer. Interface-induced Friedel oscillations in electron density can further impose an oscillatory modulation onto the two previous interactions. These three competing factors, of all electronic nature, can make a flat metal overlayer critically, marginally, or magically stable, or totally unstable against roughening. The authors further show that, for many systems, these electronic effects can easily win over the effect of stress. First-principles studies of a few representative systems support the main features of the present electronic growth concept.
- Research Organization:
- Oak Ridge National Lab., Solids State Div., TN (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 676875
- Report Number(s):
- ORNL/CP--96643; CONF-9706290--; ON: DE99000355; BR: KC0202030; CNN: Grant NSF MSS-9258115; Grant NSF DMR-9705406
- Country of Publication:
- United States
- Language:
- English
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