{open_quotes}Electronic Growth{close_quotes} of Metallic Overlayers on Semiconductor Substrates

Journal Article · Mon Jun 01 04:00:00 EDT 1998 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.80.5381· OSTI ID:636191

Zhang, Z ^[1]; Niu, Q; Shih, C ^[2]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6032 (United States)
2. Department of Physics, University of Texas at Austin, Austin, Texas 78712 (United States)

We present a novel {open_quotes}electronic growth{close_quotes} model for metallic thin films on semiconductor substrates. Depending on the competition between the effects of quantum confinement, charge spilling, and interface-induced Friedel oscillations, different types of film stability are defined, as characterized by the existence of critical/magic thicknesses for smooth growth. In particular, smooth growth can be achieved only above a few monolayers for noble metals, and only for the first layer for alkali metals. {copyright} {ital 1998} {ital The American Physical Society}

• Research Organization: Oak Ridge National Laboratory
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 636191
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 24 Vol. 80; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ALKALI METALS
DEPOSITION
ELECTRONIC STRUCTURE
GROWTH
LAYERS
SEMICONDUCTOR MATERIALS
STABILITY
SUBSTRATES
THIN FILMS