Oscillatory Nonmetal-Metal Transitions of Ultrathin Sb Overlayers on a GaAs(110) Substrate

Journal Article · Wed Apr 01 04:00:00 EST 1998 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.80.3582· OSTI ID:601033

Cho, J; Zhang, Z ^[1]; Niu, Q ^[2]; Zhang, Z ^[3]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6032 (United States)
2. Department of Physics, University of Texas at Austin, Austin, Texas 78712 (United States)
3. Department of Physics, University of Tennessee, Knoxville, Tennessee 78996 (United States)

Based on first-principles calculations, an Sb film on GaAs(110) is found to be nonmetallic at 1 and 3 monolayer (ML) coverages, and metallic at 2, 4, and higher ML coverages. These unusual oscillatory nonmetal-metal transitions are explained in terms of a generalized Wilson rule, constrained by the relative magnitudes of the separation and width of the subbands derived from the quantum-well states. The present study also establishes the existence of magic stability of the film at the odd numbers of monolayers, and strong interlayer spacing oscillations. {copyright} {ital 1998} {ital The American Physical Society}

• Research Organization: Oak Ridge National Laboratory
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 601033
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 16 Vol. 80; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
ELECTRIC CONDUCTIVITY
GALLIUM ARSENIDES
INTERFACES
LAYERS
NONMETALS
STABILITY