Theoretical studies of the electric field distribution and open-circuit voltage of amorphous silicon-based alloy p-i-n solar cells
Using a computer model based on the solution of the complete set of transport equations we have investigated electric field profiles, carrier distributions and the open-circuit voltage of amorphous silicon-based alloy p-i-n solar cells illuminated through either the p/sup +/ or n/sup +/ layer. Our results indicate that even with a large difference in the electron and hole band mobilities there is no large difference (<50 mV) in the open-circuit voltage for the two cases. This difference is small because for optimized devices the open-circuit voltage is limited by the recombination current which is relatively insensitive to space charge and Dember effects. We also show that boron doping in the intrinsic layer can drastically alter the electric field profile in these devices, and can increase the open-circuit voltage of p-i-n solar cells with low built-in potentials.
- Research Organization:
- Energy Conversion Devices, Inc., Troy, Michigan 48084
- OSTI ID:
- 6763566
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 55:12; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
BORON
CARRIER DENSITY
CHARGE CARRIERS
CHARGE DISTRIBUTION
CHARGED-PARTICLE TRANSPORT THEORY
COMPUTERIZED SIMULATION
CRYSTAL DOPING
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
ELEMENTS
EQUIPMENT
HOLES
JUNCTIONS
MOBILITY
P-N JUNCTIONS
PARTICLE MOBILITY
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON SOLAR CELLS
SIMULATION
SOLAR CELLS
SOLAR EQUIPMENT
TRANSPORT THEORY