Limitations to the open circuit voltage of amorphous silicon solar cells
Journal Article
·
· Appl. Phys. Lett.; (United States)
In this paper, we investigate the open circuit voltage of amorphous silicon alloy p-i-n and n-i-p solar cells and show that the low open circuit voltage of some devices can be caused by a built-in potential smaller than normal arising from a low band-gap p/sup +/ layer. For these solar cells, in good agreement with experimental data, the introduction of a boron profile in 200--500 A of the intrinsic region near the p/sup +/-i interface can enhance the open circuit voltage by about 150--200 mV to a value close to the bulk recombination limit.
- Research Organization:
- Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
- OSTI ID:
- 5189776
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:21; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Theoretical studies of the electric field distribution and open-circuit voltage of amorphous silicon-based alloy p-i-n solar cells
Effects of boron profiles on the open circuit voltage of p-i-n and n-i-p amorphous silicon solar cells
Combined microcrystal and amorphous silicon cells
Journal Article
·
Fri Jun 15 00:00:00 EDT 1984
· J. Appl. Phys.; (United States)
·
OSTI ID:6763566
Effects of boron profiles on the open circuit voltage of p-i-n and n-i-p amorphous silicon solar cells
Journal Article
·
Mon Jun 02 00:00:00 EDT 1986
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5984425
Combined microcrystal and amorphous silicon cells
Journal Article
·
Sun Aug 15 00:00:00 EDT 1982
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5166885