Photoemission and scanning-tunneling-microscopy study of GaSb(100)

Journal Article · Fri Jun 15 04:00:00 EDT 1990 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.41.12619· OSTI ID:6753327

Franklin, G E; Rich, D H; Samsavar, A; Hirschorn, E S; Leibsle, F M; Miller, T; Chiang, T ^[1]

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1. Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, IL (USA) Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, IL (USA)

Angle-resolved and angle-integrated synchrotron-radiation photoemission together with scanning tunneling microscopy (STM) were used to study the Sb-stabilized GaSb(100)-(1{times}3) surface grown by molecular-beam epitaxy. Bulk valence bands were mapped out in the {Gamma}-{Delta}-{ital X} direction. The deconvoluted Sb 4{ital d} and Ga 3{ital d} core-level line shapes were used to construct a structural model for the surface. STM resolved the individual atomic dimers verifying the proposed model and showed partial disorder inherent on this surface.

• DOE Contract Number: AC02-76ER01198
• OSTI ID: 6753327
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 41:18; ISSN 0163-1829; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ANTIMONIDES
ANTIMONY COMPOUNDS
CRYSTAL GROWTH
ELECTRON MICROSCOPY
EMISSION
EPITAXY
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
MICROSCOPY
MOLECULAR BEAM EPITAXY
PHOTOEMISSION
PNICTIDES
SECONDARY EMISSION