Microscopic structure of GaSb(001) c(2{times}6) surfaces prepared by Sb decapping of MBE-grown samples

Journal Article · Sun Jun 01 04:00:00 EDT 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.55.15401· OSTI ID:530197

Resch-Esser, U; Esser, N ^[1]; Brar, B; Kroemer, H ^[2]

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1. Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, D-10623 Berlin (Federal Republic of Germany)
2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

In this study we report on the microscopic structure of GaSb(001) c(2{times}6) surfaces prepared by Sb decapping. Molecular beam epitaxy grown GaSb(001) layers capped with a protective Sb layer were transferred through the atmosphere into an UHV-analysis system and investigated by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). After thermal desorption of the capping layer clear c(2{times}6) LEED patterns were observed. STM images show flat surface areas with a rowlike, somewhat disordered structure. High-resolution images resolve individual Sb dimers on the surface. The surface is covered by an incomplete layer of dimerized Sb, adsorbed on a complete second layer of Sb, which is also dimerized in that regions not covered by the fractional Sb top layer. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 530197
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 23 Vol. 55; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DESORPTION
ELECTRON DIFFRACTION
ELECTRONIC STRUCTURE
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
LATTICE PARAMETERS
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
NUCLEATION
RESOLUTION
SURFACE PROPERTIES