Vapor-grown InGaP/GaAs solar cells
GaAs solar cells with conversion efficiencies as high as 14% at AM1 have been grown by the GaCl/AsH/sub 3/ hydride technique. Thin (approx.200 A) layers of InGaP were used to passivate the GaAs top surface. We observe a 70-fold increase in photoluminescence intensity of the GaAs after passivation, which is consistent with a lowering of the GaAs surface recombination velocity from >10/sup 6/ to <10/sup 4/ cm/sec. Short-circuit current densities (J/sub sc/) as high as 22 mA/cm/sup 2/ and open-circuit voltages as high as 0.96 V were observed. (If achieved together, those values would yield an efficiency of almost 18%.) V/sub oc/ was observed to increase directly with p-layer thickness (t), whereas J/sub sc/ decreased directly with t. The efficiency also increased as the zinc doping was decreased.
- Research Organization:
- RCA Laboratories, Princeton, New Jersey 08540
- OSTI ID:
- 6748495
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:7; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CONVERSION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ENERGY CONVERSION
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
LUMINESCENCE
PHOTOELECTRIC CELLS
PHOTOLUMINESCENCE
PHOTOVOLTAIC CELLS
RECOMBINATION
SOLAR CELLS
SOLAR ENERGY CONVERSION