Characteristics of GaAs-anodic oxide metal-oxide-semiconductor solar cells

Journal Article · Sun Mar 01 04:00:00 EST 1981 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.329651· OSTI ID:6602828

Das, P; Chakravarti, S N; Bhat, K N

Metal-oxide-semiconductor solar cells with reproducible photovoltaic characteristics have been fabricated on (n/sup +/) GaAs substrates employing an oxidation technique which combines an aqueous anodization method with a post-fabrication HC1 treatment. The cell typically displays an open-circuit voltage V/sub oc/ of the order of 0.59 V and a short-circuit current density J/sub sc/ of 13.65 mA/cm/sup 2/ under simulated AM1 illumination. An efficiency of 5.7 % has been achieved without antireflection coating.

• Research Organization: Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12181
• OSTI ID: 6602828
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:3; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANODIZATION
ANTIREFLECTION COATINGS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL COATING
COATINGS
CORROSION PROTECTION
CURRENT DENSITY
DATA
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC POTENTIAL
ELECTROCHEMICAL COATING
ELECTROLYSIS
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LYSIS
MATERIALS
METALS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
PNICTIDES
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
SURFACE COATING