(SN)/sub x/-GaAs polymer-semiconductor solar cells

Journal Article · Wed Nov 01 04:00:00 EST 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90537· OSTI ID:6662683

Cohen, M J; Harris, Jr, J S

We report the first solar cell whose junction is formed by a polymer-semiconductor interface. Open-circuit voltages, V/sub oc/>0.7 V, have been observed on cells consisting of a thin film of polymeric sulfur-nitride, (SN)/sub x/, deposited on GaAs. This is an enhancement of more than 40% over the V/sub oc/ commonly measured with metal-GaAs solar cells. Initial efforts have resulted in efficiencies >6% without antireflection coatings.

• Research Organization: Rockwell International Science Center, Thousand Oaks, California 91360
• OSTI ID: 6662683
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ARSENIC COMPOUNDS
ARSENIDES
DIRECT ENERGY CONVERTERS
EFFICIENCY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFACES
NITRIDES
NITROGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
POLYMERS
SOLAR CELLS
SULFUR COMPOUNDS
SULFUR NITRIDES