Schottky barrier solar cell
Patent
·
OSTI ID:6580309
A solar cell is constructed by coating an n-type conductivity semiconductor with a thin layer of bromine doped, polymeric sulfur-nitride, (SnBr/sub 0/ /sub 4/)/sub x/. Metal deposits are provided on both materials for making electrical contact to the cell. In a preferred embodiment, the semiconductor is silicon. In a second preferred embodiment, the semiconductor is GaAs on an n+-type conductivity GaAs substrate.
- Assignee:
- Rockwell International Corp
- Patent Number(s):
- US 4227943
- OSTI ID:
- 6580309
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
DIRECT ENERGY CONVERTERS
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
MATERIALS
N-TYPE CONDUCTORS
NITRIDES
NITROGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SCHOTTKY EFFECT
SEMICONDUCTOR MATERIALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SULFUR COMPOUNDS
SULFUR NITRIDES
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
DIRECT ENERGY CONVERTERS
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
MATERIALS
N-TYPE CONDUCTORS
NITRIDES
NITROGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SCHOTTKY EFFECT
SEMICONDUCTOR MATERIALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SULFUR COMPOUNDS
SULFUR NITRIDES