Method of semiconductor solar energy device fabrication

Patent · Tue Dec 26 04:00:00 EST 1978

OSTI ID:6147002

Lesk, I A; Pryor, R A

This disclosure relates to a semiconductor solar energy device which is of the PN-type and utilizes a dielectric anti-reflective coating on the side of the device that faces the sunlight. The fabrication techniques used in making this semiconductor device include the use of a rough or textured pyramid shaped silicon surface beneath the anti-reflective coating to increase solar cell efficiency. Also, ion implantation is used to form the PN junction in the device. The ion implanted region located on the side of the device that is subjected to the sunlight is configured in order to permit metal ohmic contact to be made thereto without shorting through the doped region during sintering of the metal contacts to the semiconductor substrate. The dielectric anti-reflective coating, in one embodiment, is a composite of silicon dioxide and silicon nitride layers. The device is designed to permit solder contacts to be made to the P and N regions thereof without possibility of shorting to semiconductor regions of opposite type conductivity.

• Assignee: Motorola, Inc.
• Patent Number(s): US 4131488
• OSTI ID: 6147002
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIREFLECTION COATINGS
CHALCOGENIDES
COATINGS
DIELECTRIC MATERIALS
DIRECT ENERGY CONVERTERS
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
EQUIPMENT
FABRICATION
ION IMPLANTATION
JOINING
JUNCTIONS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
SILICON SOLAR CELLS
SINTERING
SOLAR CELLS
SOLDERING
WELDING