Fabrication of optically reflecting ohmic contacts for semiconductor devices
Patent
·
OSTI ID:869960
A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Number(s):
- 5,429,985
- Application Number:
- 08/155,386
- OSTI ID:
- 869960
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
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alloy
alloy layer
coating
contact
contacts
crystalline
crystalline substrate
device
devices
electromagnetic
electromagnetic radiation
energy
energy level
epitaxial
fabrication
film
formed
front
illuminating
layer
layer provides
level
low-resistivity
metal
metal film
metal layer
method
method produce
method produces
ohmic
ohmic contact
ohmic contacts
optical
optical reflectivity
optically
optically processing
period
predetermined
predetermined period
predetermined wavelength
processing
produce
produces
provided
provides
radiation
reflectance
reflecting
reflectivity
semiconductor
semiconductor device
semiconductor devices
semiconductor substrate
substrate
time
wafer
wavelength
alloy
alloy layer
coating
contact
contacts
crystalline
crystalline substrate
device
devices
electromagnetic
electromagnetic radiation
energy
energy level
epitaxial
fabrication
film
formed
front
illuminating
layer
layer provides
level
low-resistivity
metal
metal film
metal layer
method
method produce
method produces
ohmic
ohmic contact
ohmic contacts
optical
optical reflectivity
optically
optically processing
period
predetermined
predetermined period
predetermined wavelength
processing
produce
produces
provided
provides
radiation
reflectance
reflecting
reflectivity
semiconductor
semiconductor device
semiconductor devices
semiconductor substrate
substrate
time
wafer
wavelength