Dry texturing of solar cells
A textured backside of a semiconductor device for increasing light scattering and absorption in a semiconductor substrate is accomplished by applying infrared radiation to the front side of a semiconductor substrate that has a metal layer deposited on its backside in a time-energy profile that first produces pits in the backside surface and then produces a thin, highly reflective, low resistivity, epitaxial alloy layer over the entire area of the interface between the semiconductor substrate and a metal contact layer. The time-energy profile includes ramping up to a first energy level and holding for a period of time to create the desired pit size and density and then rapidly increasing the energy to a second level in which the entire interface area is melted and alloyed quickly. After holding the second energy level for a sufficient time to develop the thin alloy layer over the entire interface area, the energy is ramped down to allow epitaxial crystal growth in the alloy layer. The result is a textured backside on an optically reflective, low resistivity alloy interface between the semiconductor substrate and the metal electrical contact layer. 9 figs.
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States)
- Patent Number(s):
- US 5358574; A
- Application Number:
- PPN: US 8-155385
- OSTI ID:
- 7193238
- Resource Relation:
- Patent File Date: 22 Nov 1993
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
REFLECTIVE COATINGS
TEXTURE
SOLAR CELLS
EPITAXY
FABRICATION
LAYERS
OPTIMIZATION
VISIBLE RADIATION
COATINGS
DIRECT ENERGY CONVERTERS
ELECTROMAGNETIC RADIATION
EQUIPMENT
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RADIATIONS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion