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Title: High efficiency low cost thin film silicon solar cell design and method for making

Abstract

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finallymore » reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.« less

Inventors:
 [1]
  1. Denver, CO
Publication Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
872261
Patent Number(s):
US 5897331
Assignee:
Midwest Research Institute (Kansas City, MO)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
efficiency; cost; film; silicon; solar; cell; design; method; semiconductor; device; substrate; conductive; intermediate; layer; deposited; serves; electrode; optical; reflector; interface; impurity; gettering; grain; size; thickness; preferably; times; formed; depositing; metal; semiconductive; material; metal-coated; produce; composite; structure; optically; processing; illuminating; infrared; electromagnetic; radiation; according; unique; time-energy; profile; produces; pits; backside; surface; highly; reflective; resistivity; alloy; entire; finally; grain-enhanced; increasing; energy; level; initiate; pit; formation; create; desired; density; ramping; heated; interfacial; melt; reducing; third; holding; period; time; allow; enhancement; semiconductive material; time-energy profile; impurity gettering; layer serves; highly reflective; energy level; composite structure; metal layer; electromagnetic radiation; conductive material; solar cell; semiconductor material; semiconductor layer; silicon solar; grain size; semiconductor device; intermediate layer; layer deposited; alloy layer; coated substrate; cell design; layer thickness; resistivity alloy; backside surface; produces pits; pit size; optically processing; film silicon; entire device; desired pit; unique time; conductive intermediate; /438/136/

Citation Formats

Sopori, Bhushan L. High efficiency low cost thin film silicon solar cell design and method for making. United States: N. p., 1999. Web.
Sopori, Bhushan L. High efficiency low cost thin film silicon solar cell design and method for making. United States.
Sopori, Bhushan L. 1999. "High efficiency low cost thin film silicon solar cell design and method for making". United States. https://www.osti.gov/servlets/purl/872261.
@article{osti_872261,
title = {High efficiency low cost thin film silicon solar cell design and method for making},
author = {Sopori, Bhushan L},
abstractNote = {A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.},
doi = {},
url = {https://www.osti.gov/biblio/872261}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}