Semiconductor solar energy device

Patent · Tue Jan 24 04:00:00 EST 1978

OSTI ID:6882335

Coleman, M G

This disclosure relates to a semiconductor solar energy device which is of the PN-type and utilizes a dielectric anti-reflective coating on the side of the device that faces the sunlight. The fabrication techniques used in making this semiconductor device include the use of ion implantation to form doped or diffused regions in the device. One of the ion implanted regions located on the side of the device that is subjected to the sunlight is configured in order to permit metal ohmic contact to be made thereto without shorting through the doped region during sintering of the metal contacts to the semiconductor substrate. The dielectric anti-reflective coating, in one embodiment, is a composite of silicon dioxide and silicon nitride layers. The device is designed to permit solder contacts to be made to the P and N regions thereof without possibility of shorting to semiconductor regions of opposite type conductivity.

• Assignee: Motorola Inc.
• Patent Number(s): US 4070689
• OSTI ID: 6882335
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIREFLECTION COATINGS
COATINGS
DIELECTRIC MATERIALS
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
FABRICATION
ION IMPLANTATION
JUNCTIONS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SILICON SOLAR CELLS
SOLAR CELLS