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Epitaxial growth of YBa/sub 2/Cu/sub 3/O/sub 7//sub -//sub x/ thin films on (110) SrTiO/sub 3/ single crystals by activated reactive evaporation

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.100511· OSTI ID:6747086
The orientation of YBa/sub 2/Cu/sub 3/O/sub 7//sub -//sub x/ thin films grown on (110) planes of SrTiO/sub 3/ by activated reactive evaporation was investigated by means of reflection high-energy electron diffraction. The orientation of the films depended on the substrate temperature. The films with (110) planes parallel to the substrate surface grew in a narrow range of substrate temperatures around 530 /sup 0/C, while the films with (103) planes parallel to the surface grew at temperatures above 600 /sup 0/C. The change of the epitaxial orientation with the substrate temperature is discussed in terms of the temperature dependence of the lattice mismatch between YBa/sub 2/Cu/sub 3/O/sub 7//sub -//sub x/ and SrTiO/sub 3/.
Research Organization:
Institute for Chemical Research, Kyoto University, Uji 611, Japan
OSTI ID:
6747086
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:22; ISSN APPLA
Country of Publication:
United States
Language:
English