cw laser irradiation of GaAs: Arsenic formation and photoluminescence degradation

Journal Article · Mon Jul 02 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103564· OSTI ID:6739064

Campbell, I H; Fauchet, P M ^[1]

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1. Department of Electrical Engineering, Princeton University, Princeton, NJ (USA)

Low-power, cw laser irradiation of GaAs leads to the formation of solid arsenic at the sample surface and to the degradation of band-gap photoluminescence (PL) efficiency. {ital In} {ital situ} Raman scattering and PL are used to measure the lattice and carrier temperature in addition to monitoring the arsenic formation and PL efficiency. Both effects are athermal, do not involve surface oxidation, and occur in {ital n},{ital p} and semi-insulating GaAs prepared by different growth techniques. These observations suggest that arsenic formation and PL decrease may both be the result of a nonradiative recombination process.

• OSTI ID: 6739064
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:1; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER RADIATION
LUMINESCENCE
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
RAMAN EFFECT
SEMIMETALS
SYNTHESIS
TEMPERATURE DEPENDENCE