Near-field photoluminescence of microcrystalline arsenic oxides produced in anodically processed gallium arsenide

Journal Article · Mon Feb 01 04:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123454· OSTI ID:321450

Finnie, C M; Bohn, P W ^[1]

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1. Department of Chemistry, Beckman Institute and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801 (United States)

Anodic processing of (100) GaAs in aqueous HCl results in the formation of a pitted surface hosting arsenic oxide microcrystals within a porous surface network. The composition of the microcrystalline features evolves from As(V) to As(III) with processing time. Spatially localized near-field photoluminescence (PL) spectroscopy of the microcrystalline and porous features demonstrates that the strong visible photoluminescence observed in the far field originates from the {mu}m-sized crystalline features. The spatial localization of the PL on the arsenic oxide microcrystalline features argues that it does not arise from quantum confinement effects, but rather is due to luminescent features intrinsic to the arsenic oxide microcrystals on the pitted surface. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 321450
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 74; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANODIZATION
ARSENIC COMPOUNDS
GALLIUM ARSENIDES
GRAIN SIZE
OXIDATION
PHOTOLUMINESCENCE
SURFACE TREATMENTS
VISIBLE RADIATION