Short wavelength (visible) GaAs quantum well lasers grown by molecular beam epitaxy

Journal Article · Sun Jul 01 00:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94986· OSTI ID:6737736

Woodbridge, K; Blood, P; Fletcher, E D; Hulyer, P J

GaAs-AlGaAs multiple quantum well (MQW) injection lasers with well widths from 55 to 13 A have been grown by molecular beam epitaxy and operated at room temperature, showing emission at wavelengths down to 704 nm, the shortest reported for a MQW injection laser with GaAs wells. In a device with 25-A wells some evidence of coupling was apparent when barrier widths were reduced to 40 A. For devices with 80-A barriers there is a difference of about 20 nm between the calculated n = 1 (e--hh) transition wavelength and the lasing wavelength, whereas the calculation agrees with photovoltage absorption measurements on the same structures.

• Research Organization: Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England
• OSTI ID: 6737736
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 45:1
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
MOLECULAR BEAM EPITAXY
STIMULATED EMISSION
GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
VISIBLE RADIATION
ABSORPTION SPECTRA
ETCHING
EXPERIMENTAL DATA
HETEROJUNCTIONS
MEDIUM TEMPERATURE
POTENTIALS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY-LEVEL TRANSITIONS
EPITAXY
GALLIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SPECTRA
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)