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Laser annealing of ion implanted CZ silicon for solar cell junction formation

Technical Report ·
DOI:https://doi.org/10.2172/6736037· OSTI ID:6736037
Results on a contract to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation of solar cells are presented. Three inch diameter cells were fabricated for reference by furnace annealing of the ion implanted wafers. Conversion efficiencies on these cells ranged from 12.3% to 14.3%, with and without a BSF. Scaled-up size cells, from 2 x 2 cm to 2 x 4 cm, were fabricated using a two-step 25% overlap pulsed laser annealing process. Conversion efficiencies up to 15.4% were achieved. Pulsed laser annealing of textured surface wafers proved unacceptable based on the subpar electrical performances of fabricated 2 x 2 cm and 2 x 4 cm cells. Further laser annealing work using textured surfaces has been discontinued. SIMS profiling of /sup 11/B and/or /sup 49/BF/sub 2/ ion implanted species for back surface field followed by pulse annealing, both by electron beam and laser, revealed that additional work is required for optimization. The process verification phase of the contract was initiated for small (2 x 2 cm) and large (3 in. dia) cells using the surviving processing candidates showing best promise. A high throughput laser system was conceptualized which will accommodate three (3) inch diameter wafers at a rate of one per second.
Research Organization:
Lockheed Missiles and Space Co., Sunnyvale, CA (USA)
OSTI ID:
6736037
Report Number(s):
DOE/JPL/955696-80/3
Country of Publication:
United States
Language:
English