Laser annealing of ion implanted CZ silicon for solar cell junction formation. Quarterly report No. 1

Technical Report · Tue Jul 01 04:00:00 EDT 1980

DOI:https://doi.org/10.2172/5250670· OSTI ID:5250670

Katzeff, J. S.

A project to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation on solar cells is described. A Q-switched Nd:Glass laser system is used operating in the 1064 (regular) and 532 (with frequency doubler) nm wavelengths. The laser output is in excess of 30 joules with a 20 to 50 ns pulse duration. Material used in this investigation is 3-inch diameter CZ silicon, P-type 0.014 inches thick, 10..cap omega..-cm resistivity, <100> orientation. Three wafer surface conditions are being evaluated in this pulse annealing investigation: chem-polished, texture etched, and flash etched. Annealing was performed with and without beam homogenization. Both modes showed excellent lattice recovery from the implant-induced damage as analyzed using Rutherford backscattering techniques. Homogenization of the beam was performed using a fused silica rod configured with a 90/sup 0/ bend. The unhomogenized annealing was performed using a plano-concave lens. Fabrication of laser annealed cells using both modes is forthcoming.

• Research Organization: Lockheed Missiles and Space Co., Sunnyvale, CA (USA)
• OSTI ID: 5250670
• Report Number(s): DOE/JPL/955696-80/1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANNEALING
BACKSCATTERING
CRYSTALS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
FABRICATION
HEAT TREATMENTS
HEATING
ION IMPLANTATION
LASER-RADIATION HEATING
LASERS
MONOCRYSTALS
NEODYMIUM LASERS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PLASMA HEATING
SCATTERING
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SOLID STATE LASERS