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U.S. Department of Energy
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Phase 2, automated array assembly, Task IV, Low Cost Silicon Solar Array Project. Quarterly report No. 1, November 1, 1977--January 28, 1978

Technical Report ·
DOI:https://doi.org/10.2172/6868542· OSTI ID:6868542
Technical and economic evaluations are discussed on the selected process sequence consisting of: starting material CZ silicon wafers, as sawn, 3 inch diameter; texture etch with NaOH; ion implantation of phosphorus for junction formation; laser annealing; screen printing of ohmic contacts; spray-on AR coating; module assembly. Process verifications have commenced on the texturizing and ion implanting processes. Argon, ruby and YAG lasers were determined to be best suited for laser annealing having wavelengths of .5 ..mu..m, .694 ..mu..m and 1.06 ..mu..m, respectively. Arrangements are being made to utilize appropriate lasers.
Research Organization:
Lockheed Missiles and Space Co., Inc., Sunnyvale, Calif. (USA)
Sponsoring Organization:
USDOE
OSTI ID:
6868542
Report Number(s):
DOE/JPL/954898-1
Country of Publication:
United States
Language:
English