Laser annealing of ion-implanted CZ silicon for solar-cell-junction formation. Final report

Technical Report · Mon Jun 01 04:00:00 EDT 1981

DOI:https://doi.org/10.2172/6407070· OSTI ID:6407070

Katzeff, J. S.

An investigation was conducted which evaluated the merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown silicon for junction formation of solar cells. The feasibility and requirements were also determined to scale-up a laser system to anneal 7.62 cm diameter wafers at a rate of 1 wafer/second. Laser parameters were developed for optimized performance as substantiated by surface analysis. Functional cells with AM1 conversion efficiencies up to 15.4% for 2 x 2 cm and 2 x 4 cm sizes were attained, and conversion efficiencies ranged up to 14.5% for cells of 7.62 cm diameter. Texture etched surfaces are found incompatible with pulsed laser anneaing due to surface melting. Laser annealed cells are generally found to exhibit conversion efficiencies equal to or better than those of furnace annealed cells. (LEW)

• Research Organization: Lockheed Missiles and Space Co., Inc., Sunnyvale, CA (USA)
• OSTI ID: 6407070
• Report Number(s): DOE/JPL/955696-81/4; LMSC/D-798706; ON: DE81026338
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOYS
ANNEALING
BACKSCATTERING
CHEMICAL ANALYSIS
COMPARATIVE EVALUATIONS
CRYSTAL DOPING
CRYSTAL GROWTH METHODS
CZOCHRALSKI METHOD
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRON MICROSCOPY
ELEMENTS
EQUIPMENT
ETCHING
FABRICATION
HEAT TREATMENTS
ION IMPLANTATION
ION MICROPROBE ANALYSIS
JUNCTIONS
LASERS
MASS SPECTROSCOPY
MICROANALYSIS
MICROSCOPY
NONDESTRUCTIVE ANALYSIS
PERFORMANCE TESTING
PHOSPHORUS ADDITIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SCATTERING
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTROSCOPY
SURFACE FINISHING
TESTING
TEXTURE
TRANSMISSION ELECTRON MICROSCOPY