Method for forming metallic silicide films on silicon substrates by ion beam deposition

Patent · Tue Mar 13 04:00:00 EST 1990

OSTI ID:6734430

Zuhr, R A; Holland, O W

This patent describes metallic silicide films formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

• Assignee: Dept. of Energy, Washington, DC (USA)
• Patent Number(s): US 4908334; A
• Application Number: PPN: US 7-300863A
• OSTI ID: 6734430
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
BEAMS
DEPOSITION
ELEMENTS
ENERGY BEAM DEPOSITION
FABRICATION
ION BEAMS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SURFACE COATING