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Title: Method for forming metallic silicide films on silicon substrates by ion beam deposition

Abstract

Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

Inventors:
 [1];  [1]
  1. Oak Ridge, TN
Publication Date:
Research Org.:
LOCKHEED MARTIN ENRGY SYST INC
OSTI Identifier:
867300
Patent Number(s):
US 4908334
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; forming; metallic; silicide; films; silicon; substrates; beam; deposition; formed; contacting; low-energy; metal; moderately; heating; substrate; provides; diffusion; atoms; film; surface; interaction; contact; diffused; provided; contaminant; free; uniform; stoichiometry; grain; size; exhibit; resistivity; values; particular; usefulness; integrated; circuit; production; forming metal; resistivity values; beam deposition; silicon substrates; silicon substrate; grain size; integrated circuit; silicide films; metallic silicide; substrate provides; forming metallic; /438/250/

Citation Formats

Zuhr, Raymond A, and Holland, Orin W. Method for forming metallic silicide films on silicon substrates by ion beam deposition. United States: N. p., 1990. Web.
Zuhr, Raymond A, & Holland, Orin W. Method for forming metallic silicide films on silicon substrates by ion beam deposition. United States.
Zuhr, Raymond A, and Holland, Orin W. Mon . "Method for forming metallic silicide films on silicon substrates by ion beam deposition". United States. https://www.osti.gov/servlets/purl/867300.
@article{osti_867300,
title = {Method for forming metallic silicide films on silicon substrates by ion beam deposition},
author = {Zuhr, Raymond A and Holland, Orin W},
abstractNote = {Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}

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