Method for forming metallic silicide films on silicon substrates by ion beam deposition

Patent · Mon Jan 01 00:00:00 EST 1990

OSTI ID:867300

Zuhr, Raymond A ^[1]; Holland, Orin W ^[1]

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1. Oak Ridge, TN

Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: AC05-84OR21400
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4908334
• OSTI ID: 867300
• Country of Publication: United States
• Language: English

Related Subjects

method
forming
metallic
silicide
films
silicon
substrates
beam
deposition
formed
contacting
low-energy
metal
moderately
heating
substrate
provides
diffusion
atoms
film
surface
interaction
contact
diffused
provided
contaminant
free
uniform
stoichiometry
grain
size
exhibit
resistivity
values
particular
usefulness
integrated
circuit
production
forming metal
resistivity values
beam deposition
silicon substrates
silicon substrate
grain size
integrated circuit
silicide films
metallic silicide
substrate provides
forming metallic
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