Method for forming metallic silicide films on silicon substrates by ion beam deposition

Patent · Mon Jan 01 04:00:00 EST 1990

OSTI ID:867300

Zuhr, Raymond A ^[1]; Holland, Orin W ^[1]

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1. Oak Ridge, TN

Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

• Research Organization: LOCKHEED MARTIN ENRGY SYST INC
• DOE Contract Number: AC05-84OR21400
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4908334
• OSTI ID: 867300
• Country of Publication: United States
• Language: English

Related Subjects

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