Deposited-silicon film solar cell

Patent · Tue Oct 15 04:00:00 EDT 1991

OSTI ID:5494594

Barnett, A M; Hall, R B; Rand, J A; Ford, D H

This patent describes a thin-film photovoltaic solar cell. It comprises a conductive ceramic substrate containing silicon in the amount of 20 to 90 percent by weight and functioning as a mechanical support and first electrical contact; a silicon dioxide barrier layer over the substrate to provide for reflection of light to minimize back surface recombination and to prevent diffusion of impurities; a multiplicity of openings in the barrier layer occupying less than 5% of the area of the substrate to provide for electrical contact to the substrate; a layer of polycrystalline silicon less than 100 microns thick over the barrier, which includes a p-type region and an n-type region thereon forming a photovoltaic homojunction therebetween; a transparent second electrical contact means applied to the layer of polycrystalline silicon.

• Assignee: AstroPower, Inc., Newark, DE (United States)
• Patent Number(s): A; US 5057163
• Application Number: PPN: US 7-190138
• OSTI ID: 5494594
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHALCOGENIDES
CRYSTALS
DESIGN
DIRECT ENERGY CONVERTERS
EQUIPMENT
FABRICATION
FILMS
HOMOJUNCTIONS
JUNCTIONS
MATERIALS
N-TYPE CONDUCTORS
OXIDES
OXYGEN COMPOUNDS
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
POLYCRYSTALS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SILICON COMPOUNDS
SILICON OXIDES
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
THIN FILMS