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U.S. Department of Energy
Office of Scientific and Technical Information

Particulate silicon photovoltaic device and method of making

Patent ·
OSTI ID:5349202
An inexpensive photovoltaic device made using particulate silicon is described. Silicon particles of a particular type having a size range of from 300 to 1000 micrometers are sintered to a metallic substrate to form an ohmic contact therebetween. The particles and the substrate are provided with an insulating layer except for the top surfaces of the silicon particles, to which a layer of the opposite type is applied to form p-n junctions in the particles. A second electrode is then applied either directly or, preferably, via a first application of a transparent conductive coating. The device is then, preferably, covered with a light transparent member to provide a hermetic seal.
Assignee:
SRI International
Patent Number(s):
US 4514580
OSTI ID:
5349202
Country of Publication:
United States
Language:
English