Low-temperature chemical vapor deposition of high-purity copper from an organometallic source

Journal Article · · Chemistry of Materials; (USA)

DOI:https://doi.org/10.1021/cm00009a002· OSTI ID:6730434

Beach, D B; LeGoues, F K; Hu, Chao-Kun ^[1]

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1. IBM Research Div., Yorktown Heights, NY (USA)

Thermal chemical vapor deposition (CVD) of copper has been reported from several inorganic sources including copper(II) chloride, copper(II) bis(acetylacetonate), copper(II) bis(hexafluoroacetylacetonate), and copper(I) tert-butoxide. The authors wish to report the deposition of analytically pure copper films by CVD employing organometallic (trialkylphosphine)cyclopentadienylcopper(I) complexes as copper precursors.

• OSTI ID: 6730434
• Journal Information: Chemistry of Materials; (USA), Journal Name: Chemistry of Materials; (USA) Vol. 2:3; ISSN CMATE; ISSN 0897-4756
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201* -- Chemical & Physicochemical Properties
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COPPER
DATA ANALYSIS
DEPOSITION
ELEMENTS
FILMS
MEASURING INSTRUMENTS
MEASURING METHODS
METALS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
SURFACE COATING
THIN FILMS
TRANSITION ELEMENTS