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Microwave surface resistance of epitaxial YBa sub 2 Cu sub 3 O sub 7 thin films on sapphire

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.103651· OSTI ID:6728842
; ; ;  [1]; ; ;  [2]
  1. Conductus, Inc., Sunnyvale, California 94086 (USA)
  2. Hewlett-Packard Company, Palo Alto, California 94304 (USA)
Microwave surface resistance data were measured on pairs of YBa{sub 2}Cu{sub 3}O{sub 7} thin films on Al{sub 2}O{sub 3} {l brace}1102{r brace} substrates by a parallel plate resonator technique. The surface resistance {ital R}{sub {ital s}} at 10 GHz was 65 {mu}{Omega} at 10 K and 850 {mu}{Omega} at 77 K. These epitaxial YBa{sub 2}Cu{sub 3}O{sub 7} films were grown on 500-A-thick buffer layers of SrTiO{sub 3}. X-ray diffraction data showed that the YBCO thin films with the SrTiO{sub 3} buffer layers have better in-plane epitaxy than those without such buffer layers. Critical current density of 2{times}10{sup 6} A/cm{sup 2} at 74 K was measured by the ac mutual inductance response of the films. The improved microwave surface resistance and the higher critical current density are believed to be the results of better in-plane epitaxy.
OSTI ID:
6728842
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:4; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English