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Properties of epitaxial YBa sub 2 Cu sub 3 O sub 7 thin films on Al sub 2 O sub 3 l brace 1 012 r brace

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.103317· OSTI ID:7246841
 [1]; ;  [2]; ; ;  [3];  [4]; ;  [5]
  1. Conductus, Inc., Sunnyvale, California 94086 (USA)
  2. Department of Applied Physics, Stanford University, Stanford, California 94305 (USA)
  3. Hewlett-Packard Company, Palo Alto, California 94304 (USA)
  4. Department of Physics, University of California, Sante Cruz, California 95064 (USA)
  5. Xerox Palo Alto Research Center, Palo Alto, California 94304 (USA)
Epitaxial YBa{sub 2}Cu{sub 3}O{sub 7} films were grown on Al{sub 2}O{sub 3} {l brace}{bar 1}012{r brace} by a laser ablation technique. X-ray diffraction shows that films are epitaxial with the {ital c} axis perpendicular to the substrate surface and 123'' (110) aligned with sapphire (10{bar 1}1), although the full width at half maximum of the rocking curve is larger than those of epitaxial films on SrTiO{sub 3}. Typical {ital T}{sub {ital c}}'s are between 85 and 88 K with transition widths between 0.5 and 3 K. The normal-state resistivity is 270 {mu}{Omega} cm at 300 K and extrapolates to zero at zero temperature while the magnetization {ital J}{sub {ital c}} is as high as 5{times}10{sup 6} A/cm{sup 2} at 4.2 K. High-frequency loss measurements show that 2000-A-thick epitaxial films on Al{sub 2}O{sub 3} {l brace}{bar 1}012{r brace} have a surface impedance about 1 m{Omega} at 13 GHz at 4.2 K.
OSTI ID:
7246841
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:8; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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