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Ion-beam mixing of Ni/Pd layers: II. Thermally assisted regime (>500 K)

Journal Article · · J. Mat. Res.; (United States)
Atomic mixing in Ni/Pd bilayer films due to 120 keV Ar/sup +/ irradiation in the thermally assisted regime (523--673 K) has been measured, in situ, using Rutherford backscattering with 2.0 MeV /sup 4/He/sup +/ ions. The mean diameter of grains in these polycrystalline films increased from 10 to 60 nm, following Ar/sup +/ bombardment at 573 K. Initial mixing was rapid due to grain boundary diffusion and incorporation of the metal solute into the solvent metal matrix by grain growth; this mixing stage was essentially complete within 10 min for annealed films or after an Ar/sup +/ dose of 4 x 10/sup 15/ cm/sup -2/ in irradiated films (10 min irradiation). No further measurable mixing occurred in the annealed, unirradiated films. For the irradiated samples the initial rapid mixing (6--35 atoms/ion) was followed by a slower mixing stage of 0.7--1.8 atoms/ion for irradiation doses of up to 2.5 x 10/sup 16/ Ar/sup +/ cm/sup -2/. The Ar/sup +/ bombardment gave rise to much smaller mixing levels when the Pd films were deposited on large-grain or single-crystal Ni. A diffusion analysis demonstrates that the effective diffusivity, D/sub eff/, for ion-irradiation-enhanced mixing in the thermally assisted regime satisfied the relation, D/sub l/10/sup 6/.
Research Organization:
Department of Engineering Physics and Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1, Canada
OSTI ID:
6728088
Journal Information:
J. Mat. Res.; (United States), Journal Name: J. Mat. Res.; (United States) Vol. 3:6; ISSN JMREE
Country of Publication:
United States
Language:
English